发明名称 SEMICONDUCTOR MEMORY, AND METHOD OF CONFIRMING DEFECTIVE ADDRESS PROGRAMMED IN THIS DEVICE
摘要 PROBLEM TO BE SOLVED: To externally confirm the use or non-use of a defective address program circuit and a redundant fuse program circuit. SOLUTION: This device is constituted of defective address program circuits 32, 34 for programming a redundant control signal and a defective address responding to an address applied from a first control signal and the outside, a redundant-enable signal generating circuit for generating a comparison coincidence signal when an address inputted responding to a redundant control signal coincides with a defective address, output circuits 60, 62 for outputting the comparison coincidence signal and a redundant control signal to the outside responding to a second control signal at the time of a test, and a mode control signal setting circuit 36 for setting the states of the first control signal and the second control signal responding to a command signal externally applied and a mode setting signal.
申请公布号 JP2002230993(A) 申请公布日期 2002.08.16
申请号 JP20010350530 申请日期 2001.11.15
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHOI JONG-HYUN;KYO SHOSEKI;LEE YUN-SANG
分类号 G01R31/28;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G01R31/28
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