| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element or the like exhibiting a high magnetoresistance change rate and having a good bias point. SOLUTION: The magnetoresistance effect element comprises a magnetoresistance effect film 28 having a first ferromagnetic layer 21, a first nonmagnetic layer 19, second ferromagnetic layers 13, 17 having a magnetization of a second direction, a second nonmagnetic layer 9, a third ferromagnetic layer 7, and a layer 15 containing an oxide as a main component and formed in the second ferromagnetic layer, and a pair of electrodes 31 electrically connected to the film 28 to supply a current in a direction reverse to a second direction of a current magnetic field in the third ferromagnetic layer 5. Thus, a direction of a leakage magnetic field to be applied from the third layer 5 to the first layer 21 can be set to a direction for cancelling a direction of the magnetic field obtained by a sum of interlayer coupling magnetic field of the layer 21 and the layers 13, 17 by interlayer coupling from the second layers 13, 17 to be applied to the first layer 21 to the leakage magnetic field, current magnetic field.
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