| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which requires a small number of manufacturing processes and can effectively suppress short channel effects. SOLUTION: The method of manufacturing a semiconductor device comprises a process of forming a gate electrode 3 on a semiconductor substrate 1 and then forming a gate electrode top insulation film 4 on the gate electrode 3; a process of forming a high density electrode diffusion layer masking material consisting of an organic film on the semiconductor substrate 1, on and around the gate electrode 3, and on the gate electrode top insulation film 4; a process of removing the high density electrode diffusion layer masking material, so that it may be left over on the side faces of the gate electrode 3 and the gate electrode top insulation film 4; a process of forming a high density electrode diffusion layer 9 in the semiconductor substrate with the high density electrode diffusion layer masking material as a mask; and a process of removing the remaining high density electrode diffusion layer masking material.
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