MANUFACTURING METHOD OF HETERO-JUNCTION BIPOLAR TRANSISTOR, AND HETERO-JUNCTION BIPOLAR TRANSISTOR AND INTEGRATED CIRCUIT INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a hetero-junction bipolar transistor, which enables to manufacture a high-performance hetero-junction bipolar transistor with high yields. SOLUTION: On a semiconductor substrate 101, an emitter mesa section 105 and base mesa sections 104 and 103 are formed, and the surface of a sub- collector layer 102 is exposed in a region outside a collector layer 103. Then, an emitter ohmic electrode 109, base ohmic electrode 110, and collector ohmic electrode 111 are formed. Before forming an interconnection electrode 139a, 139b, and 139c by electrolytic plating, a first protective resist 128 and a second protective resist 132 are formed.