| 摘要 |
<p>PROBLEM TO BE SOLVED: To shorten the continuous write-in time and erasing time by reducing a redundant operation generated in the control of an internal boosting circuit when the continuous write-in operation and erasing operation are performed. SOLUTION: When a write-in command is written in a non-volatile memory cell array 10 (S10), an internal boosting circuit 30 immediately starts boosting (S11), at the same time as the boosting is finished (S12 to S13), write-in is performed for the memory cell array of (S14). The time in which on/off of the internal boosting circuit 30 is performed redundantly is reduced by preparing for a next write-in command without stopping the internal boosting circuit 30 even if write-in is finished (S15). When it is judged that continuous write-in is not performed (S19), the internal boosting circuit 30 is stopped (S20). Same control is performed for the other commands for rewriting the non-volatile memory cell array 10.</p> |
