发明名称 METHOD AND DEVICE FOR REDUCING AVERAGE ACCESS TIME TO NONVOLATILE MEMORY IN READ-OUT PHASE
摘要 <p>PROBLEM TO BE SOLVED: To reduce an average access time to a nonvolatile memory in a read- out phase. SOLUTION: In this method and device for reducing the average access time to the nonvolatile memory in the read-out phase, the read-out phase is generated from a matrix array 2 in a memory cell having a related logic for recognizing an access address to the memory both in a page mode and a burst mode. The method is characterized by providing a buffer memory 4 related to the cell matrix array 2, and housing memory words to the prescribed number (n) in the buffer memory 4 after the last read-out of the cell matrix array 2.</p>
申请公布号 JP2002229849(A) 申请公布日期 2002.08.16
申请号 JP20010401897 申请日期 2001.12.28
申请人 ST MICROELECTRON SRL 发明人 RIVA REGGIORI RICCARDO;SCHIPPERS STEFAN;SALI MAURO
分类号 G11C16/02;G06F12/00;G06F12/02;G06F12/04;G06F12/08;G11C7/10;G11C16/26;(IPC1-7):G06F12/04 主分类号 G11C16/02
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