| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a CMOS-type SOI device which has a high function of fixing body potential. SOLUTION: At injection into the pocket of an n MISFET, an injection mask which has an opening 51 and covers the body contact region of a p MISFET is used, and at injection into the pocket of the p MISFET, an injection mask which has an opening 61 and covers the body contact region of the n MISFET is used. The body potential is fixed surely, by avoiding the introduction of the impurities of the reverse conductivity to the body contact region into the passage parts 5e and 5b connecting the body contact region with a well region.
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