发明名称 END STATION FOR ION IMPLANTING DEVICE
摘要 PROBLEM TO BE SOLVED: To correctly implant ions by setting an actual angle of a platen 8, and constantly observing the angle in an end station 10 of an ion implanting device. SOLUTION: A tilt measuring device 1 to measure a tilt angle of the platen 8 by move of a float 2 is directly installed on the platen 8, so that by visually checking the float, the tilt angle of the platen can be easily set. An image pick-up element 13 to monitor move of the float is provided, so that the tilt angle of the platen can be monitored, thereby quality of ion implantation is improved.
申请公布号 JP2002231175(A) 申请公布日期 2002.08.16
申请号 JP20010027429 申请日期 2001.02.02
申请人 NEC YAMAGATA LTD 发明人 SAITO YOSHIYUKI
分类号 H01J37/317;(IPC1-7):H01J37/317 主分类号 H01J37/317
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