发明名称 |
SEMICONDUCTOR IC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor IC device capable of increasing a total memory capacity and in addition a higher speed operation without accompanying a fine patterning technology which requires a large amount of cost for a capital investment and has a definite limitation naturally. SOLUTION: The semiconductor IC device comprises a micon chip 201 with embedded nonvolatile memory, a nonvolatile memory chip 202 and a volatile RAM chip 203 wherein the 3 chips are stacked on each other and electrodes of at least one of the nonvolatile memory chip 202 and the volatile RAM chip 203 are electrically connected to electrodes of the micon chip 201 with embedded nonvolatile memory and sealed into one packaged 214. |
申请公布号 |
JP2002231880(A) |
申请公布日期 |
2002.08.16 |
申请号 |
JP20010025240 |
申请日期 |
2001.02.01 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NISHIMURA MOTONAGA;YOMO MICHIHARU;HORI ATSUSHI;NITTA TOSHIYA;AKASHI TAKUO;FUJIMOTO HIROAKI |
分类号 |
H01L25/18;H01L25/065;H01L25/07;(IPC1-7):H01L25/065 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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