发明名称 SEMICONDUCTOR IC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor IC device capable of increasing a total memory capacity and in addition a higher speed operation without accompanying a fine patterning technology which requires a large amount of cost for a capital investment and has a definite limitation naturally. SOLUTION: The semiconductor IC device comprises a micon chip 201 with embedded nonvolatile memory, a nonvolatile memory chip 202 and a volatile RAM chip 203 wherein the 3 chips are stacked on each other and electrodes of at least one of the nonvolatile memory chip 202 and the volatile RAM chip 203 are electrically connected to electrodes of the micon chip 201 with embedded nonvolatile memory and sealed into one packaged 214.
申请公布号 JP2002231880(A) 申请公布日期 2002.08.16
申请号 JP20010025240 申请日期 2001.02.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NISHIMURA MOTONAGA;YOMO MICHIHARU;HORI ATSUSHI;NITTA TOSHIYA;AKASHI TAKUO;FUJIMOTO HIROAKI
分类号 H01L25/18;H01L25/065;H01L25/07;(IPC1-7):H01L25/065 主分类号 H01L25/18
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