| 摘要 |
PROBLEM TO BE SOLVED: To provide a new semiconductor light emitting element which can be used suitably as a white LED, regardless of the magnitude of dislocation density. SOLUTION: A foundational layer 2 constituting the semiconductor light emitting element 20 is constituted of a high crystalline AlN layer where the half value width of an X-ray locking curve is 90 sec. or under, and a first clad layer 4 is constituted of an n-AlGaN. Moreover, the light emitting layer 5 is composed of a substrative layer 17 consisting of i-GaN and island-shaped crystals 12-1-12-5 consisting of i-AlGaInN being isolated from one another within this substrative layer. |
