| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain the bonding structure of a semiconductor device called CSP in which cracking is prevented especially at the joint of columnar electrodes at four corners among columnar electrodes formed in matrix on a silicon substrate. SOLUTION: In the region on a silicon substrate 22 except the peripheral part thereof, solder balls 33 formed on columnar electrodes are arranged in matrix. On the peripheral part of the silicon substrate 22, a solder layer 34 formed on dummy electrodes for reinforcement is arranged linearly along each side of the silicon substrate 22. When the semiconductor device 21 is bonded onto a circuit board, the columnar electrodes are connected with connection terminals on the circuit board through solder balls 33, and the dummy electrodes for reinforcement are connected with dummy terminals on the circuit board through the solder layer 34. According to the arrangement, cracking is prevented especially at the joint of columnar electrodes at four corners among the columnar electrodes formed in matrix on a silicon substrate 22.</p> |
