| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device, by which a lithography method that is suitable for at least either of the shortening of the required time for a lithographic process or cost reduction of the process can be selected. SOLUTION: This method of manufacturing semiconductor device includes a step of performing second simulation on at least the required time and the cost of a lithographic process, a step of comparing the results of the simulation with each other, with respect to a plurality of important matters and their order of priority, and a step of adopting a more advantageous lithography method for important matters with respect to a first lithography method and a second lithography method. The first lithography method includes a first step of deciding the plurality of matters, including the required time and cost of the lithography process and their priority order and uses a first exposing means which projects an electromagnetic wave or charged particle beam. The second lithography method includes a step of performing first simulation on at least the required time and cost, and uses a second exposing means which projects an electromagnetic wave having a wavelength which is different from that of the electromagnetic waves projected by means of the first exposure means or a charged particle beam, the energy of which is different from that of the charged particle beam projected by means of the first exposure means. |
