| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer-cleaning method and a wafer-cleaning device for inhibiting cross contamination to other wafers, excluding Ru contamination that is generated in a water, due to an Ru film that is to be used in many ways for the wafer hereafter. SOLUTION: Ru contaminating the rear surface of the wafer 1 where a semiconductor device has been formed in a beveled section, and a surface-side peripheral cut region (specifically, a region that is approximately 1-5 mm from the edge) is removed by etching, using a treatment chemical liquid. Ammonium cerium nitrate(ACN) solution, a mixed liquid of strong oxidizer and strong alkali, or the like is used for the treatment chemical liquid. By removing Ru contamination, that is generated when forming the Ru film used for a capacitor electrode or the like, cross contamination to other wafers can be restrained effectively.
|
