| 摘要 |
PROBLEM TO BE SOLVED: To improve the electric charge-to-voltage transducer efficiency of an electric charge detecting section without causing a harmful influence on the other characteristics by reducing the impurity region of the electric charge detecting section. SOLUTION: On a silicon substrate 110 formed with a channel section 112, an insulation film 120 is formed. By pattering a photo resist and etching, a contact hole 116 is formed. The contact hole 116 is formed by a process independently of those for the other contact holes. Thereafter, impurities for forming an N+ region are doped in continuous processes to form an N+ region 14 self-aligned in the insulation film 120. The impurities are doped in several operations from a plurality of directions with the angle kept constant with respect to a substrate 110. Then, a pickup electrode 118 is formed, and a contact section 118A is formed in the contact hole 116.
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