| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a simple structure and capable of drastically reducing an area of an external circuit substrate. SOLUTION: On the top surface of the silicon substrate 11, an insulating film 18 with which a circuit element forming region at its central part is covered and that has openings 19 exposing contact pads 17 at its peripheral part, is formed. From the top surface of one contact pad 17 toward the top surface of the insulating film 18, a thin film inductor 31 composed of square eddy-shaped wirings is provided. Both ends of the thin film inductor 31 are the contact pads 31a, 31b and further, the contact pad 32 is provided on the remaining contact pad 17 and contact pad 16a. Pillar-shaped electrodes 21 are provided on the top surface of the contact pads 31a, 31b, 32.
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