| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming wirings of a semiconductor device wherein stable contact resistance between wirings can be realized by effectively forming contact holes while keeping good uniformity in a wafer surface and without increasing the number of steps. SOLUTION: In this method for forming wirings of the semiconductor device, a wiring layer, a SiN film, and a resist layer having a wiring pattern are formed on the semiconductor substrate, the SiN layer and the wiring layer are dry etched, an insulating film is laminated on the formed wiring pattern and a remaining film of the SiN layer, a resist layer having an opening pattern to form a contact hole is formed on the insulating film, the contact hole is formed by dry etching the insulating film using the remaining film of the SiN layer as an etching stopper film, and the remaining film of the etching stopper film is dry etched.
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