| 摘要 |
PROBLEM TO BE SOLVED: To suppress film quality change due to film deposition onto a susceptor tray, especially in the manufacturing of a nitride semiconductor film containing Al. SOLUTION: For forming a nitride semiconductor film using the MOCVD method, a susceptor tray is used, which has a plate-like base and a peripheral member removably attached to the base. A substrate is set in a recess defined by the base and the peripheral member.
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