SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the drive performance of a high breakdown voltage MOS transistor. SOLUTION: The semiconductor device comprises a low-concentration P- source and drain layer 11A formed in an N-well 5, a high-concentration P-source and drain layer formed in the low-concentration P-source and drain layer 11A, and an N-body layer 19A which constitutes a channel disposed between the source and drain layers. In the semiconductor device, a P-layer 32 is formed in a surface layer of the body layer 19A.