| 摘要 |
PROBLEM TO BE SOLVED: To form an ion implanting device compact by composing it in a vertical constitution. SOLUTION: This device is composed of an ion extraction part 22 to extract ion beams outgoing from an ion source part 20 in a vertical direction, a first mass spectrometric part 26 to bend the advancing course of the extracted ion beams roughly perpendicularly, and select ion beams including ion beams of a specific ion type at least, a second mass spectrometric part 30 to select the ion beams of the specific ion type only, and bend their advancing course roughly perpendicularly toward the ion source part, and an ion implanting part 36 to implant the ion beams into a wafer. By thus bending the advancing course of the ion beams in a U-letter form by a pair of the mass spectrometric parts, this vertically long implanting device can be composed. Volume of the whole body of it can thus be more compact than a lateral type, and space can be saved, thereby facility cost and maintenance cost on a clean room can be reduced.
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