Method for roughening a surface of a semioconductor substrate

摘要

The present invention relates to a method for roughening a surface of a semiconductor substrate (1) comprising the steps of arranging the semiconductor substrate (1) in a furnace, providing a gas mixture comprising an inert gas and a halogen or a halogen-hydrogen compound in the furnace and providing a temperature between 700 and 1200 DEG C in the furnace. The inventive method is capable of roughening the surface of a semiconductor substrate resulting in an increased capacitor area with an increased capacity. <IMAGE>