发明名称 POSITIVE TYPE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a resist material having satisfactory resolving power and heat resistance even in ordinary pattern formation, capable of making pattern size smaller only by a proper flow baking temperature and having a proper flow speed, easily controllable the flow volume and rectangular profile when a semiconductor device is produced. SOLUTION: The positive type resist composition contains (a) an acid decomposable resin having solubility in an alkali developing solution increased by the action of an acid and (b) a photo-acid generating agent and the resin (a) comprises a resin A and a resin B satisfying the following characteristics; (the glass transition temperature of the resin A)>(the glass transition temperature of the resin B) before acid decomposition and (the glass transition temperature of the resin A)<(the glass transition temperature of the resin B) after acid decomposition.
申请公布号 JP2002229210(A) 申请公布日期 2002.08.14
申请号 JP20010029753 申请日期 2001.02.06
申请人 FUJI PHOTO FILM CO LTD 发明人 TAN SHIRO;FUJIMORI TORU;YAMANAKA TSUKASA
分类号 G03F7/039;C08K5/00;C08L25/00;G03F7/40;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址