发明名称 |
POSITIVE TYPE RESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a resist material having satisfactory resolving power and heat resistance even in ordinary pattern formation, capable of making pattern size smaller only by a proper flow baking temperature and having a proper flow speed, easily controllable the flow volume and rectangular profile when a semiconductor device is produced. SOLUTION: The positive type resist composition contains (a) an acid decomposable resin having solubility in an alkali developing solution increased by the action of an acid and (b) a photo-acid generating agent and the resin (a) comprises a resin A and a resin B satisfying the following characteristics; (the glass transition temperature of the resin A)>(the glass transition temperature of the resin B) before acid decomposition and (the glass transition temperature of the resin A)<(the glass transition temperature of the resin B) after acid decomposition. |
申请公布号 |
JP2002229210(A) |
申请公布日期 |
2002.08.14 |
申请号 |
JP20010029753 |
申请日期 |
2001.02.06 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
TAN SHIRO;FUJIMORI TORU;YAMANAKA TSUKASA |
分类号 |
G03F7/039;C08K5/00;C08L25/00;G03F7/40;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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