| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problems of the conventional active matrix LCD that, that if an etching mask is deviated from a polysilicon layer which is to constitute the operating layers of TFTs in forming gate electrodes, the distances between the gate electrodes and source side contact holes and the distances from the contact holes on a drain size change and therefore desired TFT characteristics could not be obtained. SOLUTION: Semiconductor layers (1) for constituting the active layers of the TFTs are formed into a U shape or zigzag shape so as to cross at least twice scanning lines (2) from a pixel electrode side and that the one TFT has plural channel regions. At least one among the plural channel regions is formed so as to be located under signal lines (3) for supplying the voltage to be impressed to pixel electrodes (14).</p> |
