SILICON-ON-INSULATOR SEMICONDUCTOR INTEGRATED CIRCUIT FOR REMOVING FLOATING BODY EFFECT OF SILICON-ON-INSULATOR TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A silicon-on-insulator(SOI) semiconductor integrated circuit for removing a floating body effect of an SOI transistor is provided to remarkably reduce junction capacitance, by using a complete trench isolation layer contacting sidewalls in parallel with a gate pattern in source/drain regions. CONSTITUTION: A buried insulation layer(153) is formed on a support substrate(151). A semiconductor layer of the first conductivity type is stacked on the buried insulation layer. A plurality of transistor active regions(155b) are composed of a predetermined region of the semiconductor layer. At least one body contact active region is composed of a part of the semiconductor layer, separated from the transistor active regions. A semiconductor residual layer(155') is disposed on the buried insulation layer between the transistor active region and the body contact active region, thinner than the semiconductor layer. A partial trench isolation layer(157a) is disposed on the semiconductor residual layer. An insulated gate pattern(161a) overlaps the partial trench isolation layer, crossing the upper portion of the respective transistor active regions. A plurality of complete trench isolation layers(157b) come in contact with the sidewalls in parallel with the gate pattern in the transistor active regions, having a bar type in parallel with the gate pattern and contacting the buried insulation layer.