| 摘要 |
PROBLEM TO BE SOLVED: To provide a preparing method of a TEM sample capable of acquiring a clear TEM image showing the intrinsic structure of the sample even if the thickness of a membrane part used for TEM observation is extremely thin. SOLUTION: This preparing method of the TEM sample is mainly characterized by lowering an accelerating voltage of FIB in order to reduce the thickness of an amorphous layer formed on the side of the membrane part used for the TEM observation by receiving damage of the FIB. Namely, by combining FIB processing using a high accelerating voltage with FIB finishing using a low accelerating voltage, the thick amorphous layer formed on the side of the membrane part by the FIB processing using the high accelerating voltage is thinned by the FIB finishing using the low accelerating voltage, and hereby the TEM image having high resolution suitable for evaluation of a manufacturing process of a minute semiconductor device can be acquired.
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