| 摘要 |
PURPOSE:To prevent a decrease of temporary capacity and a damage made by a temporary thyrister operation at C-MOS by a method wherein a buried insulation layer is selectively arranged below the areas of source and drain. CONSTITUTION:Buried insulation layers 21, 22 are selectively arranged below the source area 5 and the drain area 6 of MOS transistor area. With this arrangement a base board 12 in MOS transistor area is not separated completely from the base board 11, and a base board electrode may be taken. As a result, it is possible to prevent a twisting in performance of VD-ID (drain) and to get a superior characteristic. The temporary decrease of capacitor may be provided sufficiently by the buried insulation layers 21, 22 and a damage caused by the temporary thyrister operation when C-MOS is constructed may also be prevented. |
