| 摘要 |
PURPOSE:To provide a MOS field effect transistor incorporating a high voltage- proof and a low voltage drop during operation by a method wherein a part of a curved surface in P-N junction which is generated by a lateral dispersion of nonpure material when P-N junction face is formed is crossed at a positive bevel angle with a side surface of a groove. CONSTITUTION:When P type dispersion layer is formed, nonpure atom forming P type is longitudinally disposed and at the same time dispersed laterally, P-N<-> junction face 3 is curved at near the end of mask 7. Then, N type source dispersion layer 8 is formed. In this case, N<+>-P junction face to be formed shows a negative bevel angle with respect to the side surface V-shaped groove 4 finally formed, but no trouble is generated during is normal use. Further, V-shaped groove 4 is formed such that is crosses with the curved part of P-N<-> junction face 3 at a positive bevel angle, thereby P-N<-> junction of voltage-proof may be provided to prevent a surface yield in P-N<-> junction at V-shaped side surface. |
