| 摘要 |
PURPOSE:To evaluate a condition of a currrent amplification factor hFE accurately by a method wherein an emitter is diffused, a wafer is thermally treated in a reducing atmosphere and the current amplification factor hFE is measured in the manufacture of the semiconductor device including a process growing polysilicon after the emitter is diffused. CONSTITUTION:In order to avoid the higher shifting of the hFE II of the completed wafer formed through a polysilicon growth process in a H2 gas than the current amplification factor hFE I measured after the emitter is diffused in the wafer, the hFE is not measured after the emitter is diffused, the sample wafer is further treated thermally in the H2 gas, and the hFE III measured is the same as the hFE II after a wafer process is completed. A condition of emitter diffusion is set on the basis of the hFE. Accordingly, the condition of the current amplification factor of a bipolar type IC is evaluated accurately. |
