| 摘要 |
PURPOSE:To extend the dynamic range of a solid state image pickup element by preventing the floating capacity between the photodetecting region electrode, the reading gate electrode and the transfer region electrode of the element, thereby increasing the potential of a signal charge in the photodetecting region. CONSTITUTION:Two-phase clocks are applied to polysilicon electrodes 9, 9', thereby transferring a signal charge read from a diffused region 1 formed of a photodiode to a transfer region C in a direction of the arrow P. An active region formed of the region 1, a reading gate 13 and the region C is insulated and isolated by a thick oxidized film region 3 from the adjacent active region. When the photodetecting region A is thus formed on the region not superposed with the transfer driving polysilicon electrode 9 with a polysilicon electrode 8 for driving with voltage a photodetecting region A, a floating capacity can be eliminated, the difficulty that the driving voltage is reduced by the influence of the floating capacity and the dynamic range is thus reduced can be avoided. |
