| 摘要 |
A conductive seed layer (13) is formed on a wafer (10, 11) and a mask (14) is formed thereon, covering the areas of the integrated circuits and leaving exposed the areas (3) overlying the predetermined scribe lines for the separation of the integrated circuits; a metal is deposited by an electrochemical process on the areas (3) of the seed layer (13) which are left exposed, with the use of the seed layer as the cathode; the mask (14) is then removed and another mask (17) is formed, leaving predetermined areas (18) of the seed layer (13) exposed; a metal is deposited on the predetermined areas (18) by an electrochemical process, with the use of the seed layer as a cathode and, finally, the mask (18) is removed. Connection elements of uniform thickness throughout the substrate are thus produced with the use of a very thin seed layer (13). <IMAGE> <IMAGE> <IMAGE> <IMAGE> |
