| 摘要 |
The active pixel with analog storage for a semiconductor-based opto-electronic image sensor according to the invention comprises means for generating an electric photocharge as a function of incident electromagnetic radiation, and means for storing at least part of the photocharge, the storage means having a determined capacitance at a given time. The capacitance of the storage means can be varied by applying an electric signal to the storage means. The capacitance of the storage means is set to a first low value for reading out the photocharge stored in the storage means, and to a second higher value for storing the photocharge in the storage means. The pixel can, for instance, be used to realize a shutter pixel with increased sensitivity or an analog signal storage with increased sensitivity compared to prior-art pixel designs with analog storage functionality. <IMAGE> |
