METHOD FOR FABRICATING FUSE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a fuse of a semiconductor device is provided to improve repairing reliability regarding a defective cell of the semiconductor device, by forming the second conductive layer pattern on the first conductive layer pattern such that the second conductive layer pattern is connected to the first conductive layer pattern and by easily making the first and third conductive layer patterns from being short-circuited by the second conductive layer pattern. CONSTITUTION: The first insulation layer(22) and the first conductive layer are sequentially formed on a semiconductor substrate(20). A predetermined portion of the first conductive layer is etched to form the first conductive layer pattern(24). The second insulation layer(26) is formed on the first conductive layer pattern. A predetermined portion of the second insulation layer is etched until the surface of the first conductive layer pattern is exposed so that a contact hole is formed. The contact hole is filled with a conductive material to form the second conductive layer. The second conductive layer is etched back to form the second conductive layer pattern. The third conductive layer is formed on the second conductive layer pattern. A predetermined portion of the third conductive layer is etched to form the third conductive layer pattern(30). The third insulation layer is formed on the third conductive layer pattern.