METHOD FOR MEASURING FILM THICKNESS OF SILICON THIN FILM AS WELL AS SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE WITH MEASURED FILM THICKNESS OF SILICON THIN FILM BY THE SAME

摘要

PROBLEM TO BE SOLVED: To measure the film thickness of a silicon thin film nondestructively even in a state that the silicon thin film is a finished product. SOLUTION: In the method for measuring the film thickness of the silicon thin film 1b, the film thickness of the film 1b on a semiconductor element 10 having the film 1b is measured. Infrared rays at a wavelength of 0.9μm or more are irradiated toward the surface of the film 1b, and the film thickness of the film 1b is measured on the basis of the interference effect of reflected light L2 by the surface of the film 1b with reflected light L3 by the rear of the film 1b.