| 摘要 |
The present invention is directed to a method for manufacturing a substrate especially for SOI technologies. The new method includes the steps of: a) providing a semiconductor wafer having a front side where active devices ate to be located or are located and a back side opposite the front side; b) producing at least one trench in the back side of the wafer, the trench extending from the back side of the wafer to a level having a predetermined distance from the front side of the wafer; and c) producing an insulation structure in the trench so that vertical insulation for active devices located on the front side of the wafer is provided.
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