发明名称 Method and apparatus for plasma processing
摘要 The present invention aims to decrease reflected waves in a vacuum chamber to suppress standing waves, thereby easily controlling a plasma density so that uniform treatment can be performed. An electromagnetic wave absorber 6 composed of a resistor such as carbon, a dielectric having a large dielectric loss, such as water, or a magnetic material such as ferrite-based ceramic, or a combination of these, is provided on an inner wall surface of a first vacuum chamber 21. Microwaves introduced from a waveguide 25 into the first vacuum chamber 21 via a transmissive window 23 are absorbed to the electromagnetic wave absorber 6 to suppress reflected waves, whereby a plasma density distribution with a nearly planned pattern is easily formed at an ECR point.
申请公布号 US6431114(B1) 申请公布日期 2002.08.13
申请号 US20000659340 申请日期 2000.09.12
申请人 TOKYO ELECTRON LIMITED 发明人 IMAHASHI ISSEI;ISHII NOBUO;KAWAKAMI SATORU;KAWAI YOSHINOBU;UEDA YOKO
分类号 C23C16/00;C23C16/511;H01J37/32;H01L21/00;H01L21/205;H01L21/3065;H01L21/31;H05H1/00;H05H1/46;(IPC1-7):C23C16/00 主分类号 C23C16/00
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