Trench MOSFET with integrated schottky device and process for its manufacture

摘要

A trench type MOSgated device and a planar Schottky diode are integrated with the same chip or die and are inherently connected in parallel, sharing a common drain/cathode and a common source/anode. The mixture of a planar Schottky with a trench MOSgated device enables a simpler manufacturing process than that needed to make both devices with trench technology.