Non-volatile semiconductor memory device capable of reducing read time

摘要

A semiconductor memory device includes page buffers having load transistors, each of which supplies load current to bitlines. The device also has a load control circuit, which is commonly connected to gates of the load transistor, having two discharge paths. The load control circuit discharges the gate voltage via the first discharge path when a gate voltage applied to the gates in read operation is higher than a target voltage, and discharges the gate voltage via the second discharge path when the gate voltage arrives at the target voltage. Therefore, it is possible to quickly set the gate voltage to the target voltage.