发明名称 |
Semiconductor integrated circuit and semiconductor integrated circuit system |
摘要 |
A signal output circuit includes a first NMOS transistor that supplies the potential of its drain as output data to an output terminal that has been pulled up to a high power source voltage. This signal output circuit includes a second NMOS transistor having input to its gate a control signal that becomes a high logical level when there is no power supplied, and having its drain connected to the gate of the first NMOS transistor.
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申请公布号 |
US6433594(B1) |
申请公布日期 |
2002.08.13 |
申请号 |
US20010794028 |
申请日期 |
2001.02.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOBAYASHI SOICHI |
分类号 |
G11C17/18;G11C11/417;G11C16/06;H01L21/822;H01L27/04;H03K19/00;H03K19/0175;(IPC1-7):H03B1/00 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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