发明名称 CMOS switch circuit for transferring high voltages, in particular for line decoding in nonvolatile memories, with reduced consumption during switching
摘要 The switch circuit receives a first supply voltage and a second supply voltage different from each other; a control input receiving a control signal that may be switched between the first supply voltage and ground; a driving inverter stage supplied by the second supply voltage and defining the output of the circuit; a feedback inverter stage supplied by the second supply voltage and including a top transistor and a bottom transistor defining an intermediate node and having respective control terminals. The control terminal of the top transistor is connected to the output node, the control terminal of the bottom transistor is connected to the control input, and the intermediate node is connected to the input of the driving inverter stage. An activation element helps switching of the intermediate node from the second supply voltage to ground; current limiting transistors are arranged in the inverter stages to limit the current flowing during switching and to reduce the consumption of the circuit.
申请公布号 US6433583(B1) 申请公布日期 2002.08.13
申请号 US20000585916 申请日期 2000.06.02
申请人 STMICROELECTRONICS S.R.L.;MITSUBISHI ELECTRIC CORPORATION 发明人 MICHELONI RINO;CAMPARDO GIOVANNI;OHBA ATSUSHI;CARRERA MARCELLO
分类号 G11C16/06;G11C5/14;G11C8/10;G11C11/56;G11C16/02;G11C16/08;H03K19/00;H03K19/017;H03K19/0185;H03K19/0948;(IPC1-7):H03K19/017 主分类号 G11C16/06
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