| 摘要 |
A process for copper-plating a wafer which comprises electroplating a semiconductor wafer with an electrode comprising a corrosion-resistant metal substrate and a coat mainly composed of iridium oxide provided on the substrate as an anode and the wafer as a cathode in a solution containing copper ion. The anode is preferably an insoluble electrode comprising a corrosion-resistant metal substrate and a coat mainly composed of iridium oxide and further containing a metal or metal oxide selected from platinum, tantalum, titanium, niobium and oxides of these metals provided on the substrate. A neutral membrane or ion exchange membrane may be interposed between the anode and the cathode as a separating membrane.
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