发明名称 |
Integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein |
摘要 |
Methods of forming integrated circuit capacitors (e.g., DRAM capacitors) include the steps of forming a first capacitor electrode (e.g., polysilicon electrode) on a substrate and then forming a titanium nitride layer on the first capacitor electrode. A tantalum pentoxide dielectric layer is then formed on an upper surface of the titanium nitride layer. A step is then performed to convert the underlying titanium nitride layer into a titanium oxide layer. A second capacitor electrode is then formed on the tantalum pentoxide layer. The step of converting the titanium nitride layer into a titanium oxide layer is preferably performed by annealing the tantalum pentoxide layer in an oxygen ambient in a range between about 700° C. and 900° C. This oxygen ambient provides free oxygen to fill vacancies within the tantalum oxide layer and also provides free oxygen which diffuses into the underlying titanium nitride layer.
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申请公布号 |
US6433380(B2) |
申请公布日期 |
2002.08.13 |
申请号 |
US20010903153 |
申请日期 |
2001.07.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN DONG-WON |
分类号 |
H01L27/108;H01L21/02;H01L21/316;H01L21/8242;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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