| 摘要 |
Precharge circuitry for reading a data bit from a memory having at least two local bit lines comprises at least two precharge transistors for precharging the at least two local bit lines, at least two "keeper" transistors for keeping the at least two local bit lines, and a NAND gate for receiving the data bit from the memory via one of the at least two local bit lines and switching the at least two "keeper" transistors. The precharge circuitry does not need an additional inverter for switching any of the "keeper" transistors, thereby eliminating additional capacitance associated with the inverter and reducing unnecessary power consumption associated with the "keeper" transistors. Preferably, the transistors used in the precharge circuitry are p-channel metal-oxide-semiconductor field effect transistors (MOSFETs).
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