发明名称 Semiconductor device having a sensor with the temperature compensation function
摘要 A sensor 1 produces an output that changes linearly with absolute temperature. In response to the output, a reference voltage generator 13 produces reference voltages Vhigh and Vlow that change linearly with absolute temperature. A Schmidt trigger 14 compares the output signal from a sensor signal amplifier 12 with the reference voltages for performing on-off output. A sensor signal amplifier 12 with a temperature-independent amplification factor amplifies the output signal from the sensor 1 while performing offset compensation. A sensor signal processing circuit 2 is formed out of thin-film silicon disposed on an insulating substrate. The output from the sensor 1 undergoes accurate temperature compensation over a wide temperature range from a low temperature to a high temperature, achieving a reliable operation with accuracy at high temperature.
申请公布号 US6433615(B2) 申请公布日期 2002.08.13
申请号 US20010879904 申请日期 2001.06.14
申请人 ASAHI KASEI KABUSHIKI KAISHA 发明人 NAGANO SHUICHI;FIEDLER HORST-LOTHAR
分类号 G01D3/02;G01K7/21;G01P21/02;(IPC1-7):H03K3/42 主分类号 G01D3/02
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