| 摘要 |
PURPOSE: A method for fabricating a semiconductor capacitor is provided to prevent oxidation of a diffusion barrier as a barrier layer formed on a lower electrode of a capacitor. CONSTITUTION: A diffusion barrier(13) is formed by depositing TiN, TiSiN, TiAlN, TaSiN, TaN, and RuTiN on a conductive type substrate(11). The first metallic film(15) is formed by depositing one of Ru, Pt, and Ir on the diffusion barrier(13). A thermal process for the first metallic film(15) is performed. A buffer metal film is formed by depositing Ti, Al, and a polysilicon on the first metallic film(15) and performing the thermal process. The buffer metal film is changed into a metallic oxide layer by performing the thermal process under nitrogen atmosphere of temperature of 300 to 500 degrees centigrade. The metallic oxide layer is removed by performing an etch process. The second metallic film(17) is formed by depositing Ru on the first metallic film(15). A dielectric layer(19) is formed by depositing BST, SBT, STO, PZT, BLT, PLZT, and Ta2O5 on the second metallic film(17). An upper electrode(21) is formed on the dielectric layer(19).
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