| 摘要 |
PURPOSE:To facilitate the separation of dielectric by a method wherein the diffused layer is formed as an embedded layer through an opening of amorphous film provided on the semiconductor substrate whereon Si layer is grown and the layer on the amorphous film is made a multicrystal layer to be insulating film while the layer on the embedded layer is made a single crystal layer. CONSTITUTION:The second conductive type high impurity diffused layer 12 is formed as an embedded layer through the intermediary of an opening on the amorphous film 11 provided on the surface of the first conductive type single crystal substrate 10. When the Si layer of the second conductive type impurity dope is vapor grown on the substrate 10, the Si layer 13 on the opening becomes single crystal while the other Si layer 14 on the amorphous film becomes multicrystal insulator with large specific resistance. Through these procedures, the single crystal Si layer 13 in the prospective element forming region may be formed in the self-alignment with the embedded layer 12 fit for acceleration and high integration due to their dielectric separation. |
