Nonvolatile memory devices having alternative programming

摘要

The disclosure is a nonvolatile memory device operable in a plurality of programming cycles, including, a memory cell array formed of a plurality of memory cells connected to bit lines and word lines, a plurality of data buffers for receiving a plurality of data bits, a plurality of write drive circuits disposed between the memory cell array and the data buffers, and a circuit for generating a plurality of selection signals for controlling the write drive circuits, in response to a current level of a power supply voltage. The selection signals determines the number of data bits programmed in one of the programming cycles.