发明名称 Method and apparatus for preventing reactive vapor backstreaming and backstreaming induced deposition
摘要 This invention is directed to a method and apparatus of delaying the reaction between a first reactive gas and a second reactive gas as the first reactive gas flows into the second reactive gas. The method comprises the steps of surrounding the first reactive gas with a non-reactive gas to form an insulated first reactive gas; and flowing the insulated first reactive gas into the second reactive gas. A sweep gas is used to impart momentum to the insulated first reactive gas. The apparatus comprises three coaxial tubular members which are used to introduce the first reaction gas, the non-reactive gas, and the sweep gas. The apparatus may be installed in a semiconductor device fabrication process either just upstream of the house exhaust line or upstream of an ODC or air pollution abatement device.
申请公布号 US6432372(B2) 申请公布日期 2002.08.13
申请号 US19990257621 申请日期 1999.02.25
申请人 SCHUMACHER JOHN C. 发明人 SCHUMACHER JOHN C.
分类号 B01D47/00;B01D53/74;B01J12/00;B01J19/24;F23D11/16;F23G7/06;(IPC1-7):B01D53/74 主分类号 B01D47/00
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