发明名称 |
Apparatus and method for independent threshold voltage control of memory cell and select gate in a split-EEPROM |
摘要 |
A split-gate p-channel memory cell of an EEPROM, and method of fabricating the cell, are provided. The memory cell includes a memory transistor and select transistor that share a common gate. It further includes two independent and distinct threshold voltage adjusts implanted in different portions of a channel region of a substrate of the memory cell. One of the threshold voltage adjusts is disposed in relation to the memory transistor so as to influence its threshold voltage. The other threshold voltage adjust is disposed in relation to the selected transistor so as to influence its threshold voltage. In the method of fabrication, an n-type of dopant is implanted into the substrate to form the threshold voltage adjust associated with the memory transistor and a p-type of dopant is implanted into the substrate to form the threshold voltage adjust associated with the select transistor.
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申请公布号 |
US6432761(B1) |
申请公布日期 |
2002.08.13 |
申请号 |
US19990410787 |
申请日期 |
1999.10.01 |
申请人 |
MICROCHIP TECHNOLOGY INCORPORATED |
发明人 |
GERBER DON;SHIELDS JEFF;SUDA DAVID |
分类号 |
H01L21/28;H01L29/423;(IPC1-7):H01L21/823;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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