Gas feeding system for chemical vapor deposition reactor and method of controlling the same

摘要

A gas feeding system for applications such as chemical vapor deposition (CVD) is provided. The gas feeding system comprises a plurality of reactant source supply apparatuses that are connected to a reactor to supply different reactant sources therein discontinuously or sequentially. The gas feeding system includes a pass valve that is disposed in a supply tube between inlet and outlet valves of the reservoir for containing the reactant source. With the pass valve, the carrier gas passing therethrough flows into the reactor or the evacuation valve without passing through the reservoir when the inlet valve and outlet valve are closed to prevent the waste of non-use reactant sources. With the present invention gas feeding system, the uniformity and quality of the deposited film can be improved and the waste of reactant source can be reduced.