Sputtered silicon target for fabrication of polysilicon thin film transistors

摘要

A method of forming a thin film device includes preparing a substrate; forming a silicon target having predetermined impurities therein; depositing a layer of amorphous silicon by physical vapor deposition from the target; and crystallizing the amorphous silicon layer to form a polysilicon layer. The method of the invention is particularly suited to the formation of thin film transistors and liquid crystal displays incorporating thin film transistors.