Semiconductor device with self-aligned areas formed using a supplemental silicon overlayer,申请号US09/342751-传众专利搜索

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发明名称	Semiconductor device with self-aligned areas formed using a supplemental silicon overlayer
摘要
申请公布号	US6433388(B1)	申请公布日期	2002.08.13
申请号	US09/342751	申请日期	1999.06.29
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
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